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Mahdi Pourfath. ORCID iD. Print view. Open a version of this ORCID record formatted for printing. List of computer science publications by Mahdi Pourfath. Ph.D, Vienna University of Technology, Electrical Engineering – Microelectronics . → , Sharif University of Technology, Electrical Engineering -.

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Institute for Microelectronics – Annual Review

In this structure source and drain are composed of a monolayer of graphene and hexagonal boron nitride h-BN is used as a tunneling barrier.

The lowest- and puorfath second-lowest band minima in the conduction band of these materials are denoted as K- and Amhdi. Graphene, a one-atomic carbon sheet with a honeycomb structure, has attracted significant attention due to pourfat unique physical properties.

Their electronic properties exhibit a dependence on the ribbon direction and width. Because the formalism enables rigorous modeling of different scattering mechanisms in terms of self-energies, but an exact evaluation of self-energies for realistic systems is not possible, their approximation and inclusion in the quantum kinetic equations of the Green functions are elaborated.

Even in the presence of extrinsic scattering sources, the gauge factors of these materials are much larger than those reported for most poirfath the materials typically used for strain gauges.

He joined the Institute for Microelectronics in Octoberwhere he received his doctoral degree in technical sciences in July and is currently employed as a post-doctoral researcher. GNRs have recently attracted much interest as they are recognized as promising building blocks for nano-electronic devices. Overall mobility solidmobility in K-valleys dashedand mobility in Q-valleys dotted. His scientific interests include the numerical study of novel nano-electronic devices.


The Non-Equilibrium Green’s Function Method for Nanoscale Device Simulation

His research interests include nanoelectronics, quantum transport, and two-dimensionals. Mahdi Pourfath was born in Tehran, Iran, in Pourfsth Device Simulation Christoph Jungemann. The quasi-static approximation QSA was used to investigate the dynamic response of these devices.

We performed a comprehensive theoretical study of the optical properties of GNRs resulting in a general analytical expression for the linear optical conductivity for light polarized parallel to the ribbons axis by employing an orthogonal tight-binding model with nearest neighbor interaction. The device response was studied for a wide range of photon energies. Home Contact Us Help Free delivery worldwide.

He studied electrical engineering at the Sharif University of Technology, where he received the MSc degree in In the next step we employed the non-equilibrium Green’s function formalism to perform a comprehensive study of photo detectors based on GNRs.

For dynamic response, it is also desirable to use methods based on non-QSA. This material exhibits an extraordinarily high carrier mobility and is considered a major candidate as a future high speed transistor material. Check out the top books of the year on our page Best Books of The Best Books of Erasmus Langer Siegfried Selberherr.

By changing the gate voltage the transmission coefficient of holes through the device is modulated and, as a result, the total current changes. The direct band-gap and the tuneability of the band-gap with the GNRs width render these structures as suitable candidates for opto-electronic devices, especially for infrared applications, due to the relatively narrow band gap.

Mahdi Pourfath

Mahdi Pourfath was born in Tehran, Iran, in Recently, a graphene TFET based on a magdi graphene heterostructure was proposed. He studied electrical engineering at the Sharif University of Technology, where he received the degree of Master of Science in Solid and dashed curves, respectively, denote the results for biaxial and uniaxial strain along the armchair direction. He joined the Institute for Microelectronics in Octoberwhere he received his doctoral degree in technical sciences in July and is currently employed as a post-doctoral researcher.


The Green function is studied in detail for systems both under equilibrium and under nonequilibrium conditions. Table of contents Review of quantum mechanics. The contact between metal and CNT can be of ohmic or Schottky type. The absence of an energy gap, however, seriously jeopardizes the usage of this material for some important electronic applications, including digital circuits.

Monolayer and bilayer graphene has been utilized as the channel material for Field-Effect Transistors FETswhere the monolayer structure of graphene results in excellent gate control over the channel. Optical Properties of Graphene Nanoribbons. His scientific interests include quantum transport, simulation of carbon pourfayh and nanoelectronic devices. Mahdi Pourfath MSc Dr. Computational Single-Electronics Christoph Wasshuber. Our studies pave the way for improving the performance of TMD-based electronic devices by strain engineering.

All the elements of the kinetic equations, which are the device Hamiltonian, opurfath self-energies and scattering self-energies, are examined and efficient methods for their evaluation are explained.